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题名: AlN thin film grown on different substrates by hydride vapor phase epitaxy
作者: Sun, MS(孙茂松); Zhang, JC(张纪才); Huang, J(黄俊); Wang, JF(王建峰); Xu, K(徐科)
通讯作者: Zhang, JC(张纪才)
刊名: JOURNAL OF CRYSTAL GROWTH
发表日期: 2016
DOI: 10.1016/j.jcrysgro.2015.11.040
卷: 436
收录类别: SCI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: AlN thin films have been grown on GaN/sapphire templates, 6 H-SiC and sapphire by hydride vapor phase epitaxy. The influence of growth conditions and substrates on the crystal qualities and growth mode has been investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that the low pressure was favorable for high-quality AlN thin film growth around 1000 degrees C. The full-width at half-maximum (FWHM) of (0002) XRD of 200-nm AlN thin film grown on GaN/sapphire, 6 H-SiC and sapphire are 220,187 and 260 arc s, respectively. While the corresponding counterparts of (1012) are 1300, 662 and 2650 arc s, respectively. Both suggested that low dislocation density in AlN grown on 6 H-SiC. The morphology of AlN thin film on sapphire showed islands without coalescence initially, and then changed to be coalescent with atomic steps at 1200 nm. However, those for samples on 6 H-SiC and GaN/sapphire showed smooth surface with clear atomic steps at thickness of 200 nm. The result indicated different growth modes of AlN on different substrates. It was believed that the different lattice mismatchs between AlN and substrates led to the different crystal qualities and growth modes. (C) 2015 Elsevier B.V. All rights reserved.
关键词[WOS]: ALUMINUM NITRIDE ; LPE GROWTH ; HVPE ; TEMPLATE ; LAYERS ; TEMPERATURE ; SUBLIMATION ; PRESSURE ; CRYSTALS ; NITROGEN
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000368244600010
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4715
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Sun, MS,Zhang, JC,Huang, J,et al. AlN thin film grown on different substrates by hydride vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2016,436.
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