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题名: Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
作者: Shi, YJ; Huang, S; Bao, QL; Wang, XH; Wei, K; Jiang, HJ; Li, JF; Zhao, C; Li, SM; Zhou, Y(周宇); Gao, HW; Sun, Q(孙钱); Yang, H(杨辉); Zhang, JH; Chen, WJ; Zhou, Q; Zhang, B; Liu, XY
刊名: IEEE TRANSACTIONS ON ELECTRON DEVICES
发表日期: 2016
DOI: 10.1109/TED.2015.2510630
卷: 63, 期:2
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiNx (LPCVD-SiNx) passivation and high-temperature low-damage gate-recess technique. The high-thermal-stability LPCVD-SiNx enables a passivation-prior-to-ohmic process strategy and effectively suppresses deep states at the passivation/HEMT interface. The fabricated MIS-HEMTs feature a high V-TH of +0.85 V at the drain current of 1 mu A/mm and a remarkable ON/OFF current ratio of 10(10) while reduced dynamic ON-resistance as compared to plasma-enhanced chemical-vapor-deposited SiO2 passivation. High field-effect channel mobility of 180 cm(2)/V . s is achieved, leading to a high maximum drain current density of 663 mA/mm.
关键词[WOS]: HIGH-THRESHOLD VOLTAGE ; ENHANCEMENT-MODE ; ALGAN/GAN HEMT ; TRANSISTORS ; RESISTANCE ; INTERFACE ; METAL
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000369304700013
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4721
Appears in Collections:纳米器件及相关材料研究部_孙钱团队_期刊论文

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Recommended Citation:
Shi, YJ,Huang, S,Bao, QL,et al. Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63(2).
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文件名: Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess.pdf
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