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题名: Stress analysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate
作者: Qi, Lin; Xu, Yu; Li, Zongyao; Zhao, En; Yang, Song; Cao, Bing; Zhang, Jicai(张纪才); Wang, Jianfeng(王建峰); Xu, Ke(徐科)
通讯作者: Cao, B
刊名: MATERIALS LETTERS
发表日期: 2016
DOI: 10.1016/j.matlet.2016.09.003
卷: 185
收录类别: SCI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: Crack-free GaN microrods were fabricated on graphene/SiC substrate by hydride vapor phase epitaxy. The GaN microrods were hexagonal with the diameter up to 100 mu m and the height above 80 mu m. Raman spectra showed that E-2-high peak frequency of GaN microrod near the graphene/SiC surface had 03 cm(-1) decrease compared to stress-free GaN, the stress of the GaN microrod was 0.071 GPa. As a result, the microrods were crack-free and can be easily released by micro-mechanical exfoliation technology. After exfoliation, Raman spectra showed that graphene still existed at separated region on the surface of SiC substrate, but only GaN peaks were observed from the bottom surface of GaN microrods. GaN microrods were released from the surface of graphene instead of being released together with graphene. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]: GAN CRYSTALS ; QUALITY
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000390510900080
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4735
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Qi, Lin,Xu, Yu,Li, Zongyao,et al. Stress analysis of transferable crack-free gallium nitride microrods grown on graphene/SiC substrate[J]. MATERIALS LETTERS,2016,185.
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