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题名: Electrochemical fabrication and optoelectronic properties of hybrid heterostructure of CuPc/porous GaN
作者: Peng, F; Qin, SJ; Hu, LF; Wang, JY; Yang, JM; Chen, XQ; Pan, GB(潘革波)
通讯作者: Pan, GB(潘革波)
刊名: CHEMICAL PHYSICS LETTERS
发表日期: 2016
DOI: 10.1016/j.cplett.2016.04.024
卷: 652
收录类别: SCI
文章类型: 期刊论文
部门归属: 学科交叉综合研究部
英文摘要: A new hybrid heterostructure of p-type copper phthalocyanine (CuPc) and n-type porous GaN (PGaN) has been fabricated by electrophoretic deposition. The influence of CuPc concentration, electric field intensity, and deposition time on the growth of CuPc film has been explored. The as-prepared CuPc films are made of numerous nanorods. The X-ray diffraction (XRD) spectra revealed that the CuPc films are the b phase and amorphous type on pristine and porous GaN, respectively. Moreover, the prototype devices were fabricated on the basis of the CuPc/ PGaN heterostructures. The devices exhibited excellent photodetector performance under ultraviolet (UV) light illumination. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]: COPPER PHTHALOCYANINE ; ELECTRICAL-PROPERTIES ; THIN-FILMS ; SCHOTTKY CONTACT ; RAMAN-SCATTERING ; CUPC INTERLAYER ; HETEROJUNCTION ; PHOTOSENSOR ; INTERFACE ; TRANSPORT
语种: 英语
JCR小类分区: 四区
WOS记录号: WOS:000377204100002
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4739
Appears in Collections:学科交叉综合研究部_潘革波团队_期刊论文

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Recommended Citation:
Peng, F,Qin, SJ,Hu, LF,et al. Electrochemical fabrication and optoelectronic properties of hybrid heterostructure of CuPc/porous GaN[J]. CHEMICAL PHYSICS LETTERS,2016,652.
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