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题名: Temperature-dependent cathodoluminescence investigation of Er-implanted GaN thin films
作者: Mo, YJ; Wang, XD; Yang, MM; Zeng, XH(曾雄辉); Wang, JF(王建峰); Xu, K(徐科)
通讯作者: Wang, XD
刊名: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
发表日期: 2016
DOI: 10.1002/pssb.201552470
卷: 253, 期:3
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: In this paper, temperature-dependent cathodoluminescence (CL) spectra of Er-implanted GaN thin films were measured. The effects of accelerating voltage and temperature on the CL spectra of Er-implanted GaN were investigated. In the near band-edge emission region, the competition mechanism between DAP and (DX)-X-0 was disclosed. A slight blue shift of the DAP emission peak with the increase of accelerating voltage was observed. The temperature dependence of the CL intensity of FX emission reveals a binding energy of similar to 32 meV in Er-implanted GaN. Below 182 K, the H-2(11/2) state of Er3+ is not thermally populated and the yellow band luminescence (YL) related to the defects was observed. At higher temperature, the thermal coupling between the two excited state levels of H-2(11/2) and S-4(3/2) of Er3+ is obvious and the YL is nearly invisible. Even at 373 K, a strong green emission at 537 nm can be observed, which indicates the Er-doped GaN is promising to be applied in high-temperature environments. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
关键词[WOS]: GROWN GAN ; SEMICONDUCTORS ; ERBIUM
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000371634800017
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4742
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Mo, YJ,Wang, XD,Yang, MM,et al. Temperature-dependent cathodoluminescence investigation of Er-implanted GaN thin films[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,2016,253(3).
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