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题名: Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
作者: Ma, ZY; Wang, W; Yang, HF; Jiang, XF; Yu, J; Qin, H(秦华); Xu, L; Chen, KJ; Huang, XF; Li, W; Xu, J; Feng, D
通讯作者: Ma, ZY
刊名: JOURNAL OF APPLIED PHYSICS
发表日期: 2016
DOI: 10.1063/1.4942160
卷: 119, 期:7
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The down-scaling of nanocrystal Si (nc-Si) floating gate memory must overcome the challenge of leakage current induced by the conventional ultra-thin tunnel layer. We demonstrate that an improved memory performance based on the Al/SiNx/nc-Si/Al2O3/Si structure can be achieved by adopting the Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition. A larger memory window of 7.9V and better retention characteristics of 4.7V after 10(5) s can be obtained compared with the devices containing a conventional SiO2 tunnel layer of equivalent thickness. The capacitance-voltage characteristic reveals that the Al2O3 tunnel layer has a smaller electron barrier height, which ensures that more electrons are injected into the nc-Si dots through the Al2O3/Si interface. The analysis of the conductance-voltage and high-resolution cross-section transmission microscopy reveals that the smaller nc-Si dots dominate in the charge injection in the nc-Si floating gate MOS device with an Al2O3 tunnel layer. With an increase of the nc-Si size, both nc-Si and the interface contribute to the charge storage capacity and retention. The introduction of the Al2O3 tunnel layer in nc-Si floating gate memory provides a method to achieve an improved performance of nc-Si floating gate memory. (C) 2016 AIP Publishing LLC.
关键词[WOS]: QUANTUM DOTS ; HFO2 FILMS ; SILICON ; DIELECTRICS ; STABILITY ; ENERGY ; ALD
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000375158000030
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4748
Appears in Collections:纳米器件及相关材料研究部_秦华团队_期刊论文

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Recommended Citation:
Ma, ZY,Wang, W,Yang, HF,et al. Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition[J]. JOURNAL OF APPLIED PHYSICS,2016,119(7).
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