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题名: Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method
作者: Liu, XH(刘雪华); Zhang, JC(张纪才); Su, XJ(苏旭军); Huang, J(黄俊); Zheng, SN(郑树楠); Hu, YY(胡匀匀); Ye, BB(叶斌斌); Zhao, JJ; Wang, JF(王建峰); Zhang, JP(张锦平); Xu, K(徐科)
通讯作者: Zhang, JP(张锦平) ; Xu, K(徐科)
刊名: APPLIED PHYSICS EXPRESS
发表日期: 2016
DOI: 10.7567/APEX.9.045501
卷: 9, 期:4
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: Crack-free AlN films were grown on sapphire by hydride vapor phase epitaxy, with in situ etching applied during growth. Nanoscale voids were formed at a chosen growth stage by interrupting the growth and performing in situ etching in an H-2 atmosphere at elevated temperature. Transmission electron microscopy showed the voids located at strongly distorted locations, and hence relaxing the strain and reducing the dislocation density. Raman spectra and X-ray diffraction measurements further demonstrated important role played by the nanoscale voids in releasing misfit strain and reducing dislocations. This work opens a promising perspective for fabricating thick, high-quality AlN. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]: LIGHT-EMITTING-DIODES ; ALGAN ; GAN ; TEMPLATE ; GROWTH ; LAYER ; TEMPERATURE
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000375661600026
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4765
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Liu, XH,Zhang, JC,Su, XJ,et al. Fabrication of crack-free AlN film on sapphire by hydride vapor phase epitaxy using an in situ etching method[J]. APPLIED PHYSICS EXPRESS,2016,9(4).
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