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题名: Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy
作者: Liu, XH(刘雪华); Zhang, JC(张纪才); Huang, J(黄俊); Yang, MM; Su, XJ(苏旭军); Ye, BB; Wang, JF(王建峰); Zhang, JP(张锦平); Xu, K(徐科)
通讯作者: Zhang, JP(张锦平) ; Xu, K(徐科)
刊名: MATERIALS EXPRESS
发表日期: 2016
DOI: 10.1166/mex.2016.1315
卷: 6, 期:4
收录类别: SCI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: Controlling stress is a fundamental issue in thin film growth, and this problem becomes more complicated in AlN film growth due to low mobility of Al adatoms. To study the evolution of intrinsic stress distribution in the beginning of growth as a function of growth temperature, AlN films were grown directly on sapphire (0001) substrates at three different growth temperatures by hydride vapor phase epitaxy (HVPE). Transmission electron microscopy (TEM) demonstrated that the intrinsic stress distribution is periodic and the period increases with the increase of temperature. At lower growth temperature, the intrinsic stresses overlap with the dislocations during the initial growth, appearing as periodic nano-sized columns perpendicular to the AlN/sapphire interface when the sample is viewed with g = 11 (2) over bar0. In addition, the period is different along [1 (1) over bar 00] and [11 (2) over bar0] for a certain temperature. With the increase of growth temperature, a large fraction of misfit dislocations bend and terminate at around 1.5 mu m above the interface of AlN/sapphire forming a network. The periodicity of the stress distribution is thought to originate due to different mobilities of Al adatoms. This understanding helps to achieve stress-controllable AlN growth.
关键词[WOS]: TRANSMISSION ELECTRON-MICROSCOPY ; ALN ; SAPPHIRE ; TEMPLATE ; FILM
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000386526600010
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4766
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Liu, XH,Zhang, JC,Huang, J,et al. Influence of growth temperature on intrinsic stress distribution in aluminum nitride grown by hydride vapor phase epitaxy[J]. MATERIALS EXPRESS,2016,6(4).
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