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题名: Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light emitting diodes
作者: Liu, W; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Yang, J; He, XG; Li, XJ; Li, X; Liang, F; Liu, JP(刘建平); Zhang, LQ(张立群); Yang, H(杨辉); Zhang, YT; Du, GT
通讯作者: Zhao, DG
刊名: SUPERLATTICES AND MICROSTRUCTURES
发表日期: 2016
DOI: 10.1016/j.spmi.2016.05.037
卷: 96
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The droop behaviors of two InGaN/GaN multiple-quantum-well blue-green light-emitting diodes grown on c-plane sapphires with different In content are investigated. The higher In-content sample exhibits a lower efficiency, followed by a more significant droop as current increases in comparison with the lower-In-content diode. However, it is found that for both samples their efficiency reduction trend with increasing carrier density is nearly the same. Combining with the recombination rate equations, an analysis reveals that at the same injection current level, the carrier density in the higher-In-content quantum wells which have stronger polarization effect is larger due to the smaller bimolecular recombination coefficient, resulting in a more significant droop with current. Therefore, a study on the dependence of efficiency on carrier density can provide a clear elucidation to the physical mechanism of the efficiency droop behavior. (C) 2016 Elsevier Ltd. All rights reserved.
关键词[WOS]: EFFICIENCY-DROOP ; TMIN FLOW ; LAYER
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000383308700025
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4772
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liu, W,Zhao, DG,Jiang, DS,et al. Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light emitting diodes[J]. SUPERLATTICES AND MICROSTRUCTURES,2016,96.
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