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题名: Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes
作者: Liu, W; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Li, X; Liang, F; Liu, JP(刘建平); Zhang, LQ(张立群); Yang, H(杨辉); Zhang, YT; Du, GT
通讯作者: Zhao, DG
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
发表日期: 2016
DOI: 10.1088/0022-3727/49/14/145104
卷: 49, 期:14
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The influence of Shockley-Read-Hall (SRH) non-radiative recombination on efficiency droop is investigated for two similar InGaN/GaN multiple-quantum-well green light-emitting diodes (LEDs) with quite different luminescence efficiency. The high-efficiency diode exhibits a pronounced efficiency peak followed by a significant droop as injection current increases, while the low-efficiency sample shows a relatively small droop. Combining with the recombination rate equations, our analysis reveals that, in comparison with the high-efficiency sample, in the low-efficiency diode the injected carrier density in InGaN well layers is decreased at high currents due to the strong SRH process, leading to an apparently reduced droop. This may be a possible physical mechanism responsible for the linkage between the low efficiency and the small efficiency droop.
关键词[WOS]: PHOTOLUMINESCENCE ; TEMPERATURE
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000373619000011
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4773
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liu, W,Zhao, DG,Jiang, DS,et al. Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2016,49(14).
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