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题名: Nucleation and growth of (10(1)over-bar1) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
作者: Liu, T(刘婷); Zhang, JC(张纪才); Su, XJ(苏旭军); Huang, J(黄俊); Wang, JF(王建峰); Xu, K(徐科)
通讯作者: Zhang, JC(张纪才) ; Xu, K(徐科)
刊名: SCIENTIFIC REPORTS
发表日期: 2016
DOI: 10.1038/srep26040
卷: 6
收录类别: SCI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of (10 (1) over bar1) semi-polar AlN on (0001) AlN by constructing (10 (1) over bar1) and (10 (1) over bar1) twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN.
关键词[WOS]: TWIN BOUNDARIES ; CRYSTAL ; NANOWIRES ; QUALITY ; DIODES ; PLANE
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000375979400002
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4775
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Liu, T,Zhang, JC,Su, XJ,et al. Nucleation and growth of (10(1)over-bar1) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy[J]. SCIENTIFIC REPORTS,2016,6.
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文件名: Nucleation and growth of (10(1)over-bar1) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy .pdf
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