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题名: Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC
作者: Liang, F; Chen, P; Zhao, DG; Jiang, DS; Zhao, ZJ; Liu, ZS; Zhu, JJ; Yang, J; Liu, W; He, XG; Li, XJ; Li, X; Liu, ST; Yang, H(杨辉); Zhang, LQ(张立群); Liu, JP(刘建平); Zhang, YT; Du, GT
通讯作者: Chen, P
刊名: CHINESE PHYSICS B
发表日期: 2016
DOI: 10.1088/1674-1056/25/5/057703
卷: 25, 期:5
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: We have investigated the electron affinity of Si-doped AlN films (N-Si = 1.0 x 10(18)-1.0 x 10(19) cm(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.
关键词[WOS]: SCHOTTKY-BARRIER HEIGHT ; FIELD-EMISSION ; ALUMINUM NITRIDE ; DISPLAY STRUCTURE ; TITANIUM ; SURFACES ; DIAMOND
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000375681800061
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4785
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liang, F,Chen, P,Zhao, DG,et al. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC[J]. CHINESE PHYSICS B,2016,25(5).
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