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题名: Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD
作者: Liang, F; Chen, P; Zhao, DG; Jiang, DS; Zhao, ZJ; Liu, ZS; Zhu, JJ; Yang, J; Liu, W; He, XG; Li, XJ; Li, X; Liu, ST; Yang, H(杨辉); Liu, JP(刘建平); Zhang, LQ(张立群); Zhang, YT; Du, GT
通讯作者: Chen, P
刊名: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
发表日期: 2016
DOI: 10.1007/s00339-016-0312-4
卷: 122, 期:9
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Photoelectron spectroscopy has been employed to analyze the content and chemical states of the elements on the surface of AlN films with different thickness, which are synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates under low pressure. It is found that, besides the carbon and gallium on the AlN surface, the atom percentage of surface oxygen increases from 4.9 to 8.4, and the electron affinity also increases from 0.36 to 0.97 eV, when the thickness of AlN films increase from 50 to 400 nm. Furthermore, accompanying with the high-resolution XPS spectra of the O 1s, it is speculated that surface oxygen may be the major influence on the electron affinity, where the surface oxygen changes the surface chemical states through replacing N to form Al-O bond and Ga-O bond, although there are also a few of Ga and C contaminations in the chemical sate of Ga-O and C-C, respectively.
关键词[WOS]: NEGATIVE-ELECTRON-AFFINITY ; RAY PHOTOEMISSION SPECTROSCOPY ; SI-DOPED ALN ; ALUMINUM NITRIDE ; UNINTENTIONAL INCORPORATION ; DISPLAY STRUCTURE ; EPITAXIAL-GROWTH ; FIELD-EMISSION ; XPS ANALYSIS ; THIN-FILMS
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000382642700005
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4786
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liang, F,Chen, P,Zhao, DG,et al. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2016,122(9).
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