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题名: Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC
作者: Liang, F; Chen, P; Zhao, DG; Jiang, DS; Liu, ZS; Zhu, JJ; Yang, J; Liu, W; He, XG; Li, XJ; Li, X; Liu, ST; Yang, H(杨辉); Zhang, LQ(张立群); Liu, JP(刘建平); Zhang, YT; Du, GT
通讯作者: Chen, P 
刊名: CHEMICAL PHYSICS LETTERS
发表日期: 2016
DOI: 10.1016/j.cplett.2016.03.034
卷: 651
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: A large field emission current density of 2.55 A/cm(2) at 20.9 V and a low turn-on voltage of 7.28 V is obtained from the Si-doped 50 nm-thick AlN film, synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates, which is the best result reported for AlN film. Accompanying with atomic force surface micro-images, it is found that this current is achieved owing to a blunting process under a high voltage of 95 V, which can lead to a decrease of the root mean square roughness from 4.23 to 1.03 nm. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]: NEGATIVE ELECTRON-AFFINITY ; ALUMINUM NITRIDE ; DISPLAY STRUCTURE ; CARBON NANOTUBES ; THIN-FILMS ; SURFACES ; GALLIUM
语种: 英语
JCR小类分区: 四区
WOS记录号: WOS:000377203300015
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4788
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liang, F,Chen, P,Zhao, DG,et al. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC[J]. CHEMICAL PHYSICS LETTERS,2016,651.
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