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题名: Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathodee
作者: Liang, F; Chen, P; Zhao, DG; Jiang, DS; Liu, ZS; Zhu, JJ; Yang, J; Le, LC; Liu, W; He, XG; Li, XJ; Li, X; Zhang, LQ(张立群); Liu, JP(刘建平); Yang, H(杨辉)
通讯作者: Chen, P
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
发表日期: 2016
DOI: 10.1116/1.4936383
卷: 34, 期:1
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The breakdown mechanism of a 100 nm-thick AlN thin film cold cathode structure was investigated during the field emission process, where the AlN film was synthesized by metalorganic chemical vapor deposition under low pressure on an n-type SiC substrate. The microdevice structure formed by a Si-doped AlN film (N-Si = 1.0 x 10(18)-1.0 x 10(19) cm(-3)) and by an unintentionally doped AlN film were first characterized by a field emission (FE) system in a vacuum chamber. During the measurement, the FE current of those two samples presented an discontinuous increase with increasing voltage, and ultimately a breakdown of current with an abrupt drop-down (around 1 x 10(-6) A). Scanning electron microscopy coupled with energy dispersive spectral analysis was applied to characterize the surface morphology and chemical elements of the Si-doped AlN film surface after the FE measurement. Nonuniform local field enhancement factors of the AlN film was proposed to explain the fluctuation increase in the FE current with increasing electric field. It was believed that both heat accumulation in the cathode and the bombardment of Au ions sputtered from the anode are responsible for the breakdown of the FE characteristics of the AlN cold cathode. (C) 2015 American Vacuum Society.
关键词[WOS]: SI-DOPED ALN ; ALUMINUM NITRIDE ; ELECTRON-EMISSION ; DISPLAY STRUCTURE ; CARBON NANOTUBES ; SURFACES ; AFFINITY ; GROWTH
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000375799800019
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4789
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liang, F,Chen, P,Zhao, DG,et al. Investigation of breakdown mechanism during field emission process of AlN thin film microscopic cold cathodee[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2016,34(1).
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