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题名: Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD
作者: Liang, F.; Chen, P.; Zhao, D.G.; Jiang, D.S.; Liu, Z.S.; Zhu, J.J.; Yang, J.; Liu, W.; Li, X.; Liu, S.T.; Yang, H.(杨辉); Zhang, L.Q.(张立群); Liu, J.P.(刘建平); Zhang, Y.T.; Du, G.T.
通讯作者: Chen, P.
刊名: Materials Technology
发表日期: 2016
收录类别: EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
语种: 英语
JCR小类分区: 四区
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4790
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Liang, F.,Chen, P.,Zhao, D.G.,et al. Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD[J]. Materials Technology,2016.
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文件名: Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD.pdf
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