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题名: Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors
作者: Li, XJ; Zhao, DG; Jiang, D; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; Yang, J; He, XG; Zhang, LQ(张立群); Zhang, SM(张书名); Liu, JP(刘建平); Yang, H(杨辉)
通讯作者: Zhao, DG
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
发表日期: 2016
DOI: 10.1116/1.4936882
卷: 34, 期:1
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The influence of unintentionally doped carbon impurities of i-GaN layer on the performance of GaN-based p-i-n photodetectors is investigated. The photoluminescence spectra exhibits that the carbon impurities are strongly involved in deep trap level-related yellow luminescence band. The results of secondary ion mass spectroscopy suggest that the residual carbon impurities in the i-layer have great effect on the generation of deep trap levels, and have a strong influence on the spectral responsivity and dark current of photodetectors. Thus, the way to decrease the residual carbon impurity concentration of the i-GaN layer, such as enlarging the growth pressure, can improve the performance of p-i-n photodetectors. (C) 2015 American Vacuum Society.
关键词[WOS]: ULTRAVIOLET PHOTODETECTORS ; HIGH-POWER ; PHOTODIODES ; DETECTORS ; DIODES ; GROWTH
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000375799800005
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4796
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Li, XJ,Zhao, DG,Jiang, D,et al. Influence of residual carbon impurities in i-GaN layer on the performance of GaN-based p-i-n photodetectors[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2016,34(1).
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