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题名: Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
作者: Li, X; Zhao, DG; Yang, J; Jiang, DS; Liu, ZS; Chen, P; Zhu, JJ; Liu, W; He, XG; Li, XJ; Liang, F; Zhang, LQ(张立群); Liu, JP(刘建平); Yang, H(杨辉); Zhang, YT; Du, GT
通讯作者: Zhao, DG
刊名: SUPERLATTICES AND MICROSTRUCTURES
发表日期: 2016
DOI: 10.1016/j.spmi.2016.06.023
卷: 97
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The localization effect is studied in blue-violet light emitting InGaN/GaN multiple quantum wells (MQWs) with varying InGaN growth rate. The temperature-dependent photoluminescence (PL) measurement shows that for higher-growth-rate samples two emission peaks appear in their PL spectra. Further analysis reveals that two different localization luminescence states (i.e., deep and shallow localization states) exist in the InGaN QWs with higher QW growth rate, and the competition of radiative recombination between the two localization states determines the relative intensity of the two emission peaks. It is also found that, as InGaN growth rate reduces, the deep localization state depth is almost unchanged while the shallow localization state weakens. When the QW growth rate reduces to a certain value, the shallow localization state disappears and only a single main peak induced by deep localization state appears in the PL spectra. Finally, it is noted that an intermediate InGaN growth rate results in a better light emission efficiency of the MQW. (C) 2016 Elsevier Ltd. All rights reserved.
关键词[WOS]: CHEMICAL-VAPOR-DEPOSITION ; LIGHT-EMITTING-DIODES ; CARRIER LOCALIZATION ; LASER-DIODES ; TEMPERATURE ; EFFICIENCY ; EMISSION ; SHIFT
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000385319200020
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4797
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Li, X,Zhao, DG,Yang, J,et al. Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells[J]. SUPERLATTICES AND MICROSTRUCTURES,2016,97.
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