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题名: The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content
作者: Li, X; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Yang, J; Liu, W; He, XG; Li, XJ; Liang, F; Zhang, LQ(张立群); Liu, JP(刘建平); Yang, H(杨辉)
通讯作者: Zhao, DG
刊名: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
发表日期: 2016
DOI: 10.1002/pssa.201600013
卷: 213, 期:8
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The effects of Al composition in p-type AlGaN electron blocking layer (EBL) on electron leakage and device performance in InGaN-based quantum well (QW) laser diodes (LDs) are numerically investigated in connection with the depth of QWs. It is found that the effectiveness of EBL in blocking electron leakage depends much on Al content in EBL and In content in InGaN QWs. It is effective for low-In-content InGaN QWLDs to add moderate Al in AlGaN EBL, while it is hardly helpful and even harmful for high-In-content InGaN QWLDs to increase Al content. In addition, it is found that too much Al in EBL is unfavorable for all LDs due to the downward conduction band-bending in the last quantum barrier (LQB) layer. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
关键词[WOS]: POLARIZATION
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000385223900031
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4798
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Li, X,Zhao, DG,Jiang, DS,et al. The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2016,213(8).
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