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题名: Comparative study of the differential resistance of GaAs- and GaN-based laser diodes
作者: Li, X; Liu, ZS; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Yang, J; Le, LC; Liu, W; He, XG; Li, XJ; Liang, F; Zhang, LQ(张立群); Liu, JP(刘建平); Yang, H(杨辉); Zhang, YT; Du, GT
通讯作者: Zhao, DG
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
发表日期: 2016
DOI: 10.1116/1.4950746
卷: 34, 期:4
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The differential resistance curves of GaAs- and GaN-based laser diodes (LDs) are experimentally and numerically investigated. It is found that the dependence of the differential resistance upon the injection current differs in the GaAs-and GaN-based LDs mainly in two aspects. The first is the kink polarity of the differential resistance in the vicinity of the threshold current, and the second is the behavior of the differential resistance curve beyond the threshold current. Self-consistent calculation results suggest that the LD kink and its polarity are determined by the superposition effects of the n-side, active and p-side regions of LDs. It is found that this kink mainly differs in the differential resistance curves of the active region, while the difference in the behavior of the differential resistance curve after the lasing threshold is ascribed to a resistance change in the p-side region caused by a reduced ideality factor. (C) 2016 American Vacuum Society.
关键词[WOS]: LASING THRESHOLD ; LAYER
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000382207700022
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4799
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Li, X,Liu, ZS,Zhao, DG,et al. Comparative study of the differential resistance of GaAs- and GaN-based laser diodes[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2016,34(4).
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文件名: Comparative study of the differential resistance of GaAs- and GaN-based laser diodes.pdf
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