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题名: Effects of thickneb on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates
作者: Li, H; Shi, YD; Feng, MX(冯美鑫); Sun, Q(孙钱); Lu, TC
通讯作者: Lu, TC
刊名: APPLIED PHYSICS EXPRESS
发表日期: 2016
DOI: 10.7567/APEX.9.042101
卷: 9, 期:4
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: We investigated the effect of device thickness on the internal quantum efficiency (IQE) of thin-film GaN light-emitting diodes (LEDs), which were grown on Si substrates and transferred to other Si substrates with reduced film thickness. It was confirmed by Raman spectroscopy and photoluminescence measurement that the compressive strain is released and the quantum-confined Stark effect (QCSE) is suppressed after reducing the thickness. The best IQE of 62.9% was reached with a large suppression of the band tilting by QCSE, from 7.9meV in the original structure to 2.4meV in the thinnest sample, and this value can compete with that of GaN-based LEDs grown on a sapphire substrate. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]: MULTIPLE-QUANTUM WELLS ; PHONON DEFORMATION POTENTIALS ; VAPOR-PHASE EPITAXY ; LASER LIFT-OFF ; SAPPHIRE SUBSTRATE ; RAMAN-SCATTERING ; ALPHA-GAN ; TEMPERATURE ; NONPOLAR ; GROWTH
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000375661600007
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4812
Appears in Collections:纳米器件及相关材料研究部_孙钱团队_期刊论文

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Recommended Citation:
Li, H,Shi, YD,Feng, MX,et al. Effects of thickneb on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates[J]. APPLIED PHYSICS EXPRESS,2016,9(4).
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