中国科学院苏州纳米技术与纳米仿生研究所机构知识库
Advanced  
SINANO OpenIR  > 纳米研究国际实验室  > 张珽团队  > 期刊论文
题名: Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction
作者: Li, GH(李光辉); Liu, L; Wu, G(武观); Chen, W(陈韦); Qin, SJ(秦双娇); Wang, Y; Zhang, T(张珽)
通讯作者: Zhang, T(张珽) ; Wang, Y
刊名: SMALL
发表日期: 2016
DOI: 10.1002/smll.201600835
卷: 12, 期:36
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米研究国际实验室
英文摘要: A novel self-powered photodetector based on reduced graphene oxide (rGO)/n-Si p-n vertical heterojunction with high sensitivity and fast response time is presented. The photodetector contains a p-n vertical heterojunction between a drop-casted rGO thin film and n-Si. Contacts between the semiconductor layer (rGO, n-Si) and source-drain Ti/Au electrodes allow efficient transfer of photogenerated charge carriers. The self-powered UV-near infrared photodetector shows high sensitivity toward a spectrum of light from 365 to 1200 nm. Under the 600 nm illumination (0.81 mW cm(-2)), the device has a photoresponsivity of 1.52 A W-1, with fast response and recover time (2 ms and 3.7 ms), and the ON/OFF ratios exceed 10 4 when the power density reaches approximate to 2.5 mW cm(-2). The high photoresponse primarily arises from the built-in electric field formed at the interface of n-Si and rGO film. The effect of rGO thickness, rGO reduction level, and layout of rGO/n-Si effective contact area on device performance are also systematically investigated.
关键词[WOS]: JUNCTION SOLAR-CELLS ; HIGH RESPONSIVITY ; ROOM-TEMPERATURE ; EPITAXIAL GRAPHENE ; BROAD-BAND ; ULTRAVIOLET ; PHOTOTRANSISTORS ; PHOTORESPONSE ; FILMS ; NANOPARTICLES
语种: 英语
JCR小类分区: 一区
WOS记录号: WOS:000384684500013
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4815
Appears in Collections:纳米研究国际实验室_张珽团队_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
Li-2016-Self-Powered UV-Near Infrared Photodet.pdf(1697KB)期刊论文作者接受稿限制开放View 联系获取全文

Recommended Citation:
Li, GH,Liu, L,Wu, G,et al. Self-Powered UV-Near Infrared Photodetector Based on Reduced Graphene Oxide/n-Si Vertical Heterojunction[J]. SMALL,2016,12(36).
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Li, GH(李光辉)]'s Articles
[Liu, L]'s Articles
[Wu, G(武观)]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Li, GH(李光辉)]‘s Articles
[Liu, L]‘s Articles
[Wu, G(武观)]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: Li-2016-Self-Powered UV-Near Infrared Photodet.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!