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题名: Fabrication of 45 nm high In component metamorphic In(0.7)Ga0.3As/In0.6Ga(0.4)As composite-channel high electron-mobility transistors on GaAs substrates
作者: Kang, WH; Zhang, XD; Ji, X; Cai, Y(蔡勇); Zhou, JH; Xu, WJ; Li, Q; Xiao, GL; Zhang, BS(张宝顺); Li, H
通讯作者: Kang, WH
刊名: ELECTRONICS LETTERS
发表日期: 2016
DOI: 10.1049/el.2015.2126
卷: 52, 期:4
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: A 45 nm high In component metamorphic In0.7Ga0.3As/In0.6Ga0.4As composite-channel high electron-mobility transistor (mHEMT) on GaAs substrate with good DC and RF performance has been developed. The structure was grown by molecular beam epitaxy and exhibits a superior electron mobility of 10200 cm(2)/(V.s) and a sheet density of 3.5 x 1012 cm(-2) at a room temperature. A combined optical and e-beam lithography technology was used to achieve the nanometre mHEMT device. The mHEMT device shows an extrinsic transconductance of up to 990 mS/mm and a maximum current density of 910 mA/mm. The unity current gain cutoff frequency f(T) and the maximum oscillation frequency f(max) are 187.94 and 258.62 GHz, respectively. These performances make the device well suited for millimetre-wave applications.
关键词[WOS]: GATE ; HEMTS
语种: 英语
JCR小类分区: 四区
WOS记录号: WOS:000369863000035
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4826
Appears in Collections:纳米器件及相关材料研究部_张宝顺团队_期刊论文

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Recommended Citation:
Kang, WH,Zhang, XD,Ji, X,et al. Fabrication of 45 nm high In component metamorphic In(0.7)Ga0.3As/In0.6Ga(0.4)As composite-channel high electron-mobility transistors on GaAs substrates[J]. ELECTRONICS LETTERS,2016,52(4).
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