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题名: Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO
作者: Jin, L(靳琳); Chen, Q(陈沁); Liu, WW(柳婉婉); Song, SC(宋世超)
通讯作者: Chen, Q(陈沁)
刊名: PLASMONICS
发表日期: 2016
DOI: 10.1007/s11468-015-0146-5
卷: 11, 期:4
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: An electro-absorption modulator based on indium tin oxide is proposed by constructing a waveguide consisting of metal-dielectric-ITO-dielectric-Si stack. Applying a negative voltage bias on the ITO layer, carrier accumulation occurs at both dielectric-ITO interfaces, which dramatically changes the guided mode properties due to the epsilon-near-zero effect. By tuning the real part of the permittivity around zero, the guided plasmonic mode concentrates in either ITO or dielectric layers, resulting in a high propagation loss. These dual carrier accumulation layers significantly improve the extinction ratio of the modulator. A further improvement is obtained by using high refractive index dielectric thin layers, which provides a strong optical confinement in the carrier accumulation layers. The dual carrier accumulation layer device shows a 200 % increase of the modulation efficiency compared to a single accumulation layer design. A modulation depth of 9.9 dB/mu m can be achieved by numerical simulation.
关键词[WOS]: PLASMONIC WAVE-GUIDES ; OPTICAL MODULATORS ; PLASMOSTOR ; DEPENDENCE
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000379179300018
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4831
Appears in Collections:纳米器件及相关材料研究部_陈沁团队_期刊论文

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Recommended Citation:
Jin, L,Chen, Q,Liu, WW,et al. Electro-absorption Modulator with Dual Carrier Accumulation Layers Based on Epsilon-Near-Zero ITO[J]. PLASMONICS,2016,11(4).
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