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题名: Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate
作者: Jiang, T; Xu, SR; Zhang, JC; Li, PX; Huang, J(黄俊); Ren, ZY; Zhu, JD; Chen, ZB; Zhao, Y; Hao, Y
通讯作者: Xu, SR ; Hao, Y
刊名: AIP ADVANCES
发表日期: 2016
DOI: 10.1063/1.4944862
卷: 6, 期:3
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4 degrees misoriented from c-plane toward <10<(1)over bar>0> m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL) spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
关键词[WOS]: CHEMICAL-VAPOR-DEPOSITION ; LIGHT-EMITTING-DIODES ; EPITAXIAL LATERAL OVERGROWTH ; MOLECULAR-BEAM EPITAXY ; RAMAN-SCATTERING ; MOVPE GROWTH ; GAN ; DISLOCATION ; CATHODOLUMINESCENCE ; LAYER
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000373684200096
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4837
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Jiang, T,Xu, SR,Zhang, JC,et al. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4 degrees misoriented sapphire substrate[J]. AIP ADVANCES,2016,6(3).
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