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题名: The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures
作者: Jahn, U; Musolino, M; Lahnemann, J; Dogan, P; Garrido, SF; Wang, JF; Xu, K(徐科); Cai, D; Bian, LF(边历峰); Gong, XJ(弓哓晶); Yang, H(杨辉)
通讯作者: Jahn, U
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
发表日期: 2016
DOI: 10.1088/0268-1242/31/6/065018
卷: 31, 期:6
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: GaN several tens of mu m thick has been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates were covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in the cathodoluminescence images of the cross-section of the layers. These cathodoluminescence features provide an insight into the growth process. During a second high-temperature (high-T) step, the SFs disappear, and the luminescence of this part of the GaN layer is dominated by the donor-bound exciton. For templates consisting of both a thin AlN buffer and GaN nanostructures, the incorporation of silicon into the GaN grown by HVPE is not observed. Moreover, the growth mode of the (high-T) HVPE step depends on the specific structure of the AlN/GaN template, where in the first case, epitaxy is dominated by the formation of slowly growing facets, while in the second case, epitaxy proceeds directly along the c-axis. For templates without GaN nanostructures, cathodoluminescence spectra excited close to the Si/GaN interface show a broadening toward higher energies, indicating the incorporation of silicon at a high dopant level.
关键词[WOS]: TEMPLATED (111)SI SUBSTRATE ; MOLECULAR-BEAM EPITAXY ; THICK GAN ; LATERAL OVERGROWTH ; GROWTH ; HVPE ; FILMS ; CATHODOLUMINESCENCE ; NANOHETEROEPITAXY ; CRYSTAL
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000378201000023
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4843
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Jahn, U,Musolino, M,Lahnemann, J,et al. The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2016,31(6).
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