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题名: High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
作者: Huang, Sen; Liu, Xinyu; Wang, Xinhua; Kang, Xuanwu; Zhang, Jinhan; Bao, Qilong; Wei, Ke; Zheng, Yingkui; Zhao, Chao; Gao, Hongwei(高宏伟); Sun, Qian(孙钱); Zhang, Zhaofu; Chen, Kevin J.
通讯作者: Huang, S
刊名: IEEE ELECTRON DEVICE LETTERS
发表日期: 2016
DOI: 10.1109/LED.2016.2617381
卷: 37, 期:12
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). The sheet resistance of 2-D electron gas in the UTB Al0.22Ga0.78N(5-nm)/GaN heterostructure is effectively reduced by SiNx passivation grown by low-pressure chemical vapor deposition, from 2570 to 334 Omega/square. The fabricated Al2O3/AlGaN/GaN MIS-HEMTs exhibit normally-OFF behavior with good V-TH uniformity and low V-TH-hysteresis. 20 mm-gate-width power devices featuring a low R-on of 0.75 Omega (I-D,I- MAX = 6.5 A) are also demonstrated on the platform.
关键词[WOS]: ELECTRON-MOBILITY TRANSISTORS ; MODULATION ; VOLTAGE ; LAYER
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000389332700022
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4847
Appears in Collections:纳米器件及相关材料研究部_孙钱团队_期刊论文

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Recommended Citation:
Huang, Sen,Liu, Xinyu,Wang, Xinhua,et al. High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure[J]. IEEE ELECTRON DEVICE LETTERS,2016,37(12).
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