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题名: Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
作者: Hua, MY; Lu, YY; Liu, SH; Liu, C; Fu, K(付凯); Cai, Y(蔡勇); Zhang, BS(张宝顺); Chen, KJ
通讯作者: Hua, MY ; Chen, KJ
刊名: IEEE ELECTRON DEVICE LETTERS
发表日期: 2016
DOI: 10.1109/LED.2016.2519680
卷: 37, 期:3
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米加工公共平台
英文摘要: In this letter, we demonstrate an integrated process that illustrates the compatibility of AlN/SiNx passivation with high-performance (i.e. low leakage and high breakdown) low-pressure chemical vapor deposition (LPCVD) SiNx gate dielectric for GaN-based MIS-HEMT. It is shown that the AlN/SiNx passivation structure maintains its superior capability of suppressing the current collapse after enduring high temperature of 780 degrees C during the LPCVD-SiNx deposition. The AlN/SiNx passivation is shown to be significantly better than the LPCVD-SiNx passivation by delivering small dynamic R-ON degradation, especially under high drain bias switching with V-DS > 100 V.
关键词[WOS]: CHEMICAL-VAPOR-DEPOSITION ; LOW-CURRENT-COLLAPSE ; ALGAN/GAN HEMTS ; INTERFACE ; LEAKAGE ; TRAPS ; PEALD
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000372372100007
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4851
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Hua, MY,Lu, YY,Liu, SH,et al. Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT[J]. IEEE ELECTRON DEVICE LETTERS,2016,37(3).
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文件名: Compatibility of AlNSiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MISHEMT.pdf
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