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题名: Compatibility of AlN/SiNxpassivation with LPCVD-SiNxgate dielectric in GaN-based MIS-HEMT
作者: Hua, Mengyuan; Lu, Yunyou; Liu, Shenghou; Liu, Cheng; Fu, Kai(付凯); Cai, Yong(蔡勇); Zhang, Baoshun(张宝顺); Chen, Kevin J.
刊名: IEEE Electron Device Letters
发表日期: 2016
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
语种: 英语
JCR小类分区: 二区
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4852
Appears in Collections:纳米器件及相关材料研究部_张宝顺团队_期刊论文

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Recommended Citation:
Hua, Mengyuan,Lu, Yunyou,Liu, Shenghou,et al. Compatibility of AlN/SiNxpassivation with LPCVD-SiNxgate dielectric in GaN-based MIS-HEMT[J]. IEEE Electron Device Letters,2016.
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文件名: Compatibility of AlNSiNxpassivation with LPCVD SiNxgate dielectric in GaN-based MIS-HEMT.pdf
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