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题名: A low resistivity n(++)-InGaN/p(++)-GaN polarization-induced tunnel junction
作者: Hu, WW; Zhang, SM(张书明); Ikeda, M; Chen, YG; Liu, JP(刘建平); Feng, MX; Li, DY(李德尧); Zhang, F; Zhou, K; Tian, AQ; Yang, H(杨辉)
通讯作者: Zhang, SM(张书明)
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
发表日期: 2016
DOI: 10.1088/0022-3727/49/11/115103
卷: 49, 期:11
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: A low resistivity n(++)-InGaN/p(++)-GaN tunnel junction is illustrated. The tunneling current density of tunnel junction with 30 percent In content in InGaN layer turns out to be extraordinary high (10 kA cm(-2)) even at a relatively low bias voltage (0.1 V) compared with traditional n(++)-GaN/p(++)-GaN. And we optimize the InGaN layer including the thickness, indium component and the doping concentration to increase the tunneling probability with the 1D Schrodinger Poisson self-consistent method and WKB (Wentzel-Kramers-Brillouin) approximation. It is shown that the peak value of electric field in tunnel junction caused by spontaneous polarization and piezoelectric effect reaches 7.1 MV cm(-1) with the 2D hole gas concentration of 2 x 10(20) cm(-3) at the interface between InGaN and GaN. That indicates n(++)-InGaN/p(++)-GaN tunnel junction has a potential application in GaN-based optoelectronic device.
关键词[WOS]: GAN ; MG
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000371007100006
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4858
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Hu, WW,Zhang, SM,Ikeda, M,et al. A low resistivity n(++)-InGaN/p(++)-GaN polarization-induced tunnel junction[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2016,49(11).
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