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题名: Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates
作者: He, Y(何洋); Sun, YR(孙玉润); Song, Y; Zhao, YM(赵勇明); Yu, SZ(于淑珍); Dong, JR(董建荣)
通讯作者: Dong, JR(董建荣)
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS
发表日期: 2016
DOI: 10.7567/JJAP.55.065501
卷: 55, 期:6
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: High-quality strain-relaxed InP layers with undulating step-graded Al(Ga)InAs buffers were grown on GaAs substrates by metal-organic chemical vapor deposition. Transmission electron microscopy, high-resolution electron microscopy (HREM), atom force microscopy, and photoluminescence were carried out to characterize the metamorphic buffers. V-shaped dislocations in [001] Al(Ga)InAs reverse-graded layers were observed by HREM and the behavior of reverse-graded layers was simulated theoretically using analytical models. Both the experimental and theoretical results indicated that the insertion of reverse-graded layers with appropriately designed thicknesses and In grading coefficients promotes the annihilation and coalescence reactions between threading dislocations and reduces threading dislocations density. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]: METAMORPHIC BUFFERS ; MISFIT DISLOCATIONS ; LAYERS ; GENERATION ; HETEROSTRUCTURES ; SEMICONDUCTORS ; OVERSHOOT ; DEVICES ; LASERS
语种: 英语
JCR小类分区: 四区
WOS记录号: WOS:000377062700017
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4863
Appears in Collections:纳米器件及相关材料研究部_董建荣团队_期刊论文

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Recommended Citation:
He, Y,Sun, YR,Song, Y,et al. Control of threading dislocations by Al(Ga)InAs reverse-graded buffers grown on GaAs substrates[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2016,55(6).
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