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题名: Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy
作者: He, W; Lu, SL(陆书龙); Yang, H(杨辉)
通讯作者: He, W
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
发表日期: 2016
卷: 35, 期:2
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The initial heteroepitaxial growth stages of GaAs on Ge (100) by all-solid-source molecular beam epitaxy (MBE) were studied by means of reflection high-energy electron diffraction (RHEED), high resolution X-ray diffraction (XRD) and atomic force microscopy, as well as the effects of different growth conditions to the epitaxial layer qualities. It was indicated that high growth temperatures or low growth rates enabled a layer-by-layer growth mode of initial GaAs nucleation layer which was evidenced by RHEED patterns. However, the combination of low growth temperatures and low growth rates for the initial GaAs layer gave lower full-width at half-maximum value of rocking curves and lower surface roughness of the epitaxial materials, owing to the decrease of the lattice mismatch between substrates and epi-layers.
语种: 英语
JCR小类分区: 四区
WOS记录号: WOS:000375514900015
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4865
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
He, W,Lu, SL,Yang, H. Initial heteroepitaxial growth and characterization of GaAs on Ge (100) by all-solid-source molecular beam epitaxy[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2016,35(2).
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