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题名: Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment
作者: Hao, RH; Fu, K(付凯); Yu, GH(于国浩); Li, WY; Yuan, J; Song, L; Zhang, ZL; Sun, SC; Li, XJ; Cai, Y(蔡勇); Zhang, XP; Zhang, BS(张宝顺)
通讯作者: Zhang, XP ; Zhang, BS(张宝顺)
刊名: APPLIED PHYSICS LETTERS
发表日期: 2016
DOI: 10.1063/1.4964518
卷: 109, 期:15
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米加工公共平台
英文摘要: In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 x 10(7), a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work. Published by AIP Publishing.
关键词[WOS]: FIELD-EFFECT TRANSISTORS ; GATE ALGAN/GAN HEMTS ; GAN ; ENHANCEMENT ; PASSIVATION ; HFET
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000386534800027
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4867
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Hao, RH,Fu, K,Yu, GH,et al. Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment[J]. APPLIED PHYSICS LETTERS,2016,109(15).
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文件名: Normally off pGaNAlGaNGaN high electron mobility transistors using hydrogen plasma treatment .pdf
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