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题名: Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors
作者: Gu, JT(顾健婷); Han, J(韩洁); Liu, D; Yu, XQ(余小芹); Kang, LX(康黎星); Qiu, S(邱松); Jin, HH(金赫华); Li, HB(李红波); Li, QW(李清文); Zhang, J
通讯作者: Qiu, S(邱松) ; Li, QW(李清文)
刊名: SMALL
发表日期: 2016
DOI: 10.1002/smll.201600398
卷: 12, 期:36
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 先进材料研究部
关键词[WOS]: WALLED CARBON NANOTUBES ; FIELD-EFFECT TRANSISTORS ; LARGE-DIAMETER ; SELECTIVE DISPERSION ; PREFERENTIAL GROWTH ; INTEGRATED-CIRCUITS ; CONJUGATED POLYMERS ; LOW-COST ; DENSITY ; EXTRACTION
语种: 英语
JCR小类分区: 一区
WOS记录号: WOS:000384684500010
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4875
Appears in Collections:先进材料研究部_李清文团队_期刊论文

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Recommended Citation:
Gu, JT,Han, J,Liu, D,et al. Solution-Processable High-Purity Semiconducting SWCNTs for Large-Area Fabrication of High-Performance Thin-Film Transistors[J]. SMALL,2016,12(36).
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