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题名: Study of optical properties of bulk GaN crystals grown by HVPE
作者: Gu, H(顾泓); Ren, GQ(任国强); Zhou, TF(周桃飞); Tian, FF(田飞飞); Xu, Y(徐俞); Zhang, YM(张育民); Wang, MY(王明月); Zhang, ZQ(张志强); Cai, DM; Wang, JF(王建峰); Xu, K(徐科)
通讯作者: Xu, K(徐科)
刊名: JOURNAL OF ALLOYS AND COMPOUNDS
发表日期: 2016
DOI: 10.1016/j.jallcom.2016.03.064
卷: 674
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 测试分析平台
英文摘要: We investigated the optical properties of a series of GaN samples sliced from the same bulk crystal grown using hydride vapor phase epitaxy. The high crystalline quality of the samples was evaluated using cathodoluminescence measurements, and the dislocation density ranged from 2.4 x 10(6) to 2.3 x 10(5) cm(-2). The impurity concentration was determined using secondary-ion mass spectroscopy, and photoluminescence (PL) measurements were conducted in the range of 3-300 K. We did not find a correlation between the O or C impurities and the weak yellow luminescence (YL) band. As the dislocation density decreased, the intensity of the band edge emission increased and that of the YL band decreased. A competition between the two-electron satellite lines correlated to Si and the YL band was also observed in the low-temperature PL spectra, which demonstrated that the Si impurity also plays an important role in the weak YL band of these GaN samples. These results indicate that the Si donors around the dislocations, as reasonable sources of shallow donors, will recombine with possible deep acceptors and finally respond with the YL. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]: VAPOR-PHASE EPITAXY ; MOLECULAR-BEAM EPITAXY ; YELLOW LUMINESCENCE ; DISLOCATIONS ; SURFACE ; ORIGIN ; IMPURITIES ; NANOWIRES ; EMISSION ; DONOR
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000373612500031
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4877
Appears in Collections:测试分析平台_期刊论文

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Recommended Citation:
Gu, H,Ren, GQ,Zhou, TF,et al. Study of optical properties of bulk GaN crystals grown by HVPE[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2016,674.
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