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题名: Giant spin-torque diode sensitivity in the absence of bias magnetic field
作者: Fang, B(方彬); Carpentieri, M; Hao, XJ; Jiang, HW; Katine, JA; Krivorotov, IN; Ocker, B; Langer, J; Wang, KL; Zhang, BS(张宝顺); Azzerboni, B; Amiri, PK; Finocchio, G; Zeng, ZM(曾中明)
通讯作者: Zeng, ZM(曾中明)
刊名: NATURE COMMUNICATIONS
发表日期: 2016
DOI: 10.1038/ncomms11259
卷: 7
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米加工公共平台
英文摘要: Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.
关键词[WOS]: TUNNEL-JUNCTIONS ; ROOM-TEMPERATURE ; POLARIZED CURRENT ; MAGNETORESISTANCE ; DRIVEN ; OSCILLATOR
语种: 英语
JCR小类分区: 一区
WOS记录号: WOS:000373829100001
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4889
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Fang, B,Carpentieri, M,Hao, XJ,et al. Giant spin-torque diode sensitivity in the absence of bias magnetic field[J]. NATURE COMMUNICATIONS,2016,7.
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