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题名: Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling
作者: Dai, YQ; Li, SM; Gao, HW; Wang, WH; Sun, Q(孙钱); Peng, Q; Gui, CQ; Qian, ZF; Liu, S
通讯作者: Dai, YQ ; Liu, S
刊名: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
发表日期: 2016
DOI: 10.1007/s10854-015-3984-1
卷: 27, 期:2
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mismatch between the film and substrate. The model is verified by Raman scattering experiments with carefully prepared samples. The stresses analyzed from Raman frequency shifts in experiments show excellent agreement with the stresses from finite element modeling simulations. The interaction force mechanisms and the impact factors are compared. The analysis provides an insight in understanding the defect behaviors in film growth. Our model could be useful in the evaluation of the residual stresses and deformations in film growth control, post thermal process in device manufacture, packaging, and reliability estimation.
关键词[WOS]: THERMAL-EXPANSION ; LATTICE-PARAMETERS ; ELASTIC-CONSTANTS ; THIN-FILMS ; CRYSTALS ; ALGAN ; SEMICONDUCTORS ; SILICON ; DEVICES ; STATE
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000369010900128
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4899
Appears in Collections:纳米器件及相关材料研究部_孙钱团队_期刊论文

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Recommended Citation:
Dai, YQ,Li, SM,Gao, HW,et al. Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2016,27(2).
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