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题名: Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy
作者: Dai, P(代盼); Lu, SL(陆书龙); Uchida, SR; Ji, L(季莲); Wu, YY(吴渊渊); Tan, M(谭明); Bian, LF(边历峰); Yang, H(杨辉)
通讯作者: Lu, SL(陆书龙) ; Uchida, SR
刊名: APPLIED PHYSICS EXPRESS
发表日期: 2016
DOI: 10.7567/APEX.9.016501
卷: 9, 期:1
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: An InGaP/GaAs tandem cell on a GaAs substrate and an InGaAsP/InGaAs tandem cell on an InP substrate were grown separately by all-solid-state molecular beam epitaxy. A room-temperature direct wafer-bonding technique was used to integrate these subcells into an InGaP/GaAs//InGaAsP/InGaAs wafer-bonded solar cell, which resulted in an abrupt interface with low resistance and high optical transmission. The current-matching design for the base layer thickness of each cell was investigated. The resulting efficiency of the four-junction solar cell was 42.0% at 230 suns, which demonstrates the great potential of the room-temperature wafer-bonding technique to achieve high conversion efficiency for cells with four or more junctions. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]: EFFICIENCY ; DIFFUSION ; JUNCTION ; GAAS ; SI
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000370161900025
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4900
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Dai, P,Lu, SL,Uchida, SR,et al. Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy[J]. APPLIED PHYSICS EXPRESS,2016,9(1).
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