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题名: Hole transport in c-plane InGaN-based green laser diodes
作者: Cheng, Y(程洋); Liu, JP(刘建平); Tian, AQ(田爱琴); Zhang, F(张峰); Feng, MX(冯美鑫); Hu, WW(胡威威); Zhang, SM(张书明); Ikeda, M; Li, DY(李德尧); Zhang, LQ(张立群); Yang, H(杨辉)
通讯作者: Liu, JP(刘建平)
刊名: APPLIED PHYSICS LETTERS
发表日期: 2016
DOI: 10.1063/1.4961377
卷: 109, 期:9
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs. Published by AIP Publishing.
关键词[WOS]: SIMULATION ; GAN ; MODEL
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000384401900022
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4903
Appears in Collections:纳米器件及相关材料研究部_刘建平团队_期刊论文

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Recommended Citation:
Cheng, Y,Liu, JP,Tian, AQ,et al. Hole transport in c-plane InGaN-based green laser diodes[J]. APPLIED PHYSICS LETTERS,2016,109(9).
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文件名: Hole transport in c-plane InGaN-based green laser diodes .pdf
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