中国科学院苏州纳米技术与纳米仿生研究所机构知识库
Advanced  
SINANO OpenIR  > 先进材料研究部  > 李立强团队  > 期刊论文
题名: Facile Peeling Method as a Post-Remedy Strategy for Producing an Ultrasmooth Self-Assembled Monolayer for High-Performance Organic Transistors
作者: Chen, XS; Xu, ZY; Wu, KJ; Zhang, SN; Li, HW; Meng, YC; Wang, ZW; Li, LQ(李立强); Ma, XM
通讯作者: Ma, XM ; Li, LQ(李立强)
刊名: LANGMUIR
发表日期: 2016
DOI: 10.1021/acs.langmuir.6b02585
卷: 32, 期:37
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 先进材料研究部
英文摘要: The modification of dielectric surface with a self-assembled monolayer (SAM) such as octadecyltrichlorosilane (OTS) is a widely used method to tune the electrical property of diverse electronic devices based on organic semiconductors, graphene, transition metal dichalcogenides (TMDs), and so forth. The surface roughness of self-assembled OTS monolayer is a key factor in determining its effect on device performance, but the preparation of an ultrasmooth OTS monolayer is a technologically challenging task. In this work, an ultrasmooth OTS monolayer is prepared via a facile peeling method, which may serve as a postremedy strategy to remove the protuberant aggregates. Such a method has not been reported before. With organic semiconductors as a testing model, ultrasmooth OTS may significantly improve the charge mobility of organic field-effect transistors (OFETs). P-type dinaphtho [2,3-b :2',3'-f]thieno[3,2-b]thiophene (DNTT) OFET with an ultrasmooth OTS monolayer yields good reproducibility and unprecendented maximum mobility of 8.16 cm(2) V-1 s(-1), which is remarkably superior to that of the OFET with a pristine OTS monolayer. This work develops a simple method to resolve the common and significant problem of the quality of OTS modification, which would be highly promising for electronic applications as well as other fields such as surface and interface engineering.
关键词[WOS]: FIELD-EFFECT TRANSISTORS ; THIN-FILM TRANSISTORS ; MOLECULAR-ORIENTATION ; MONO LAYERS ; OCTADECYLTRICHLOROSILANE ; GRAPHENE ; SURFACE ; STABILITY ; GROWTH ; SEMICONDUCTOR
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000384038200014
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4909
Appears in Collections:先进材料研究部_李立强团队_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
Chen-2016-Facile Peeling Method as a Post-Reme.pdf(650KB)期刊论文作者接受稿限制开放View 联系获取全文

Recommended Citation:
Chen, XS,Xu, ZY,Wu, KJ,et al. Facile Peeling Method as a Post-Remedy Strategy for Producing an Ultrasmooth Self-Assembled Monolayer for High-Performance Organic Transistors[J]. LANGMUIR,2016,32(37).
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Chen, XS]'s Articles
[Xu, ZY]'s Articles
[Wu, KJ]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Chen, XS]‘s Articles
[Xu, ZY]‘s Articles
[Wu, KJ]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: Chen-2016-Facile Peeling Method as a Post-Reme.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!