中国科学院苏州纳米技术与纳米仿生研究所机构知识库
Advanced  
SINANO OpenIR  > 先进材料研究部  > 李立强团队  > 期刊论文
题名: Improving the Charge Injection in Organic Transistors by Covalently Linked Graphene Oxide/Metal Electrodes
作者: Chen, XS(陈小松); Zhang, SN(张素娜); Wu, KJ(吴昆杰); Xu, ZY(徐泽洋); Li, HW(); Meng, YC; Ma, XM; Liu, LW(刘立伟); Li, LQ(李立强)
通讯作者: Li, LQ(李立强)
刊名: ADVANCED ELECTRONIC MATERIALS
发表日期: 2016
DOI: 10.1002/aelm.201500409
卷: 2, 期:4
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 先进材料研究部
英文摘要: Electrodes, one of the key components of organic field-effect transistors (OFETs), exert great influence on the device performance as well as circuit fabrication. Conventional metal electrodes generally show poor contact quality with organic semiconductors, especially in bottom-contact geometry. Development of appropriate modification materials and methods for metal electrodes is an efficient way to improve OFET performance, which is, however, quite a challenging task. In this work, a facile strategy is developed to modify the metal surface with graphene oxide (GO) via covalent bonds for application in OFETs, which has not been reported before. This selective covalent modification strategy is compatible with diverse patterning techniques, and the covalently linked GO-Au electrode exhibits strong robustness against solvent treatment. Remarkably, the GO-Au electrode shows very good generality with both p-type and n-type organic semiconductors, which contributes to the realization of p-/n-type OFETs with significantly improved performance compared with the pristine Au electrode. The facile and low temperature modification method, compatibility with diverse patterning techniques, robustness against solvent treatment, good generality with organic semiconductors, and high OFET performance enable the strategy to be very promising for application in the field of organic electronics.
关键词[WOS]: FIELD-EFFECT TRANSISTORS ; THIN-FILM TRANSISTORS ; SELF-ASSEMBLED MONOLAYERS ; WALLED CARBON NANOTUBES ; CONTACT RESISTANCE ; SOURCE/DRAIN ELECTRODES ; ELECTRICAL-PROPERTIES ; PATTERNED GRAPHENE ; METAL-ELECTRODES ; LEVEL ALIGNMENT
语种: 英语
JCR小类分区: 四区
WOS记录号: WOS:000374335800019
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4910
Appears in Collections:先进材料研究部_李立强团队_期刊论文

Files in This Item:
File Name/ File Size Content Type Version Access License
Improving the Charge Injection in Organic Transistors by Covalently Linked Graphene Oxide_Metal Electrodes.pdf(1671KB)----限制开放View 联系获取全文

Recommended Citation:
Chen, XS,Zhang, SN,Wu, KJ,et al. Improving the Charge Injection in Organic Transistors by Covalently Linked Graphene Oxide/Metal Electrodes[J]. ADVANCED ELECTRONIC MATERIALS,2016,2(4).
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Chen, XS(陈小松)]'s Articles
[Zhang, SN(张素娜)]'s Articles
[Wu, KJ(吴昆杰)]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Chen, XS(陈小松)]‘s Articles
[Zhang, SN(张素娜)]‘s Articles
[Wu, KJ(吴昆杰)]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: Improving the Charge Injection in Organic Transistors by Covalently Linked Graphene Oxide_Metal Electrodes.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!