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题名: The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes
作者: Chen, P; Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Yang, J; Li, X; Le, LC; He, XG; Liu, W; Li, XJ; Liang, F; Zhang, BS(张宝顺); Yang, H(杨辉); Zhang, YT; Du, GT
通讯作者: Zhao, DG
刊名: AIP ADVANCES
发表日期: 2016
DOI: 10.1063/1.4945015
卷: 6, 期:3
收录类别: SCI ; EI
文章类型: 期刊论文
部门归属: 纳米加工公共平台
英文摘要: In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes. (C) 2016 Author(s).
关键词[WOS]: LIGHT-EMITTING DEVICES ; LOW-ASPECT-RATIO ; HIGH-POWER ; GROWTH ; LAYERS
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000373684200052
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4916
Appears in Collections:纳米加工公共平台_期刊论文

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Recommended Citation:
Chen, P,Zhao, DG,Jiang, DS,et al. The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes[J]. AIP ADVANCES,2016,6(3).
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文件名: The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes.pdf
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