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题名: Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge
作者: Chen, JX(陈俊霞); He, W; Jia, SP; Jiang, DS; Lu, SL(陆书龙); Bian, LF(边历峰); Yang, H(杨辉)
通讯作者: Lu, SL(陆书龙)
刊名: JOURNAL OF ELECTRONIC MATERIALS
发表日期: 2016
DOI: 10.1007/s11664-015-4225-3
卷: 45, 期:1
收录类别: SCI
文章类型: 期刊论文
部门归属: 纳米器件及相关材料研究部
英文摘要: The photoluminescence (PL) properties of a GaInP epilayer with an ultrathin AlAs interfacial layer grown on Ge were investigated by time-resolved photoluminescence spectroscopy and temperature-dependent PL spectroscopy. A double-exponential PL decay with two time constants was observed, where the fast component is attributed to the emission from ordered GaInP while the slow component is related to localized states. Increased thickness of the AlAs interfacial layer resulted in an increased PL decay time due to the increased degree of order of the GaInP. Furthermore, the broad PL peak around 1.57 eV appearing in the GaInP epilayer after insertion of the AlAs layer might be attributed to phosphorus-vacancy-related deep levels.
关键词[WOS]: SOLAR-CELLS ; DEEP LEVELS ; GAAS ; GA0.52IN0.48P ; DEPENDENCE ; LIFETIMES
语种: 英语
JCR小类分区: 三区
WOS记录号: WOS:000367467800102
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4919
Appears in Collections:纳米器件及相关材料研究部_SONY团队_期刊论文

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Recommended Citation:
Chen, JX,He, W,Jia, SP,et al. Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge[J]. JOURNAL OF ELECTRONIC MATERIALS,2016,45(1).
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文件名: Chen-2016-Effects of Ultrathin AlAs Interfacia.pdf
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