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题名: Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits
作者: Chen, BY; Zhang, PP; Ding, L; Han, J; Qiu, S(邱松); Li, QW(李清文); Zhang, ZY; Peng, LM
通讯作者: Zhang, ZY ; Peng, LM
刊名: NANO LETTERS
发表日期: 2016
DOI: 10.1021/acs.nanolett.6b02046
卷: 16, 期:8
收录类别: SCI
文章类型: 期刊论文
部门归属: 先进材料研究部
英文摘要: Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.
关键词[WOS]: THIN-FILM TRANSISTORS ; ATOMIC LAYER DEPOSITION ; HIGH-PERFORMANCE ; ELECTRONICS ; NETWORKS ; VARIABILITY ; JUNCTION ; DEVICES ; DESIGN ; ARRAYS
语种: 英语
JCR小类分区: 一区
WOS记录号: WOS:000381331900055
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4923
Appears in Collections:先进材料研究部_李清文团队_期刊论文

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Recommended Citation:
Chen, BY,Zhang, PP,Ding, L,et al. Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits[J]. NANO LETTERS,2016,16(8).
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