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题名: Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy
作者: Bao, W; Su, ZC; Zheng, CC; Ning, JQ(宁吉强); Xu, SJ
通讯作者: Xu, SJ
刊名: SCIENTIFIC REPORTS
发表日期: 2016
DOI: 10.1038/srep34545
卷: 6
收录类别: SCI
文章类型: 期刊论文
部门归属: 大科学装置
英文摘要: Two-dimensional InGaN/GaN multiple-quantum-wells (MQW) LED structure was nanotextured into quasi-one-dimensional nanowires (NWs) with different average diameters with a combination approach of Ni nanoislands as mask + dry etching. Such nanotexturing bring out several appealing effects including deeper localization of carriers and significant improvement in quantum efficiency (e.g., from 4.76% of the planar MQW structure to 12.5% of the 160 nm MQW NWs) of light emission in the whole interested temperature range from 4 K to 300 K. With the aid of localized-state ensemble (LSE) luminescence model, the photoluminescence spectra of the samples are quantitatively interpreted in the entire temperature range. In terms of distinctive temperature dependence of photoluminescence from these samples, a concept of "negative" thermal activation energy is tentatively proposed for the MQW NWs samples. These findings could lead to a deeper insight into the physical nature of localization and luminescence mechanism of excitons in InGaN/GaN nanowires.
关键词[WOS]: LIGHT-EMITTING-DIODES ; EXCITON LUMINESCENCE ; TEMPERATURE ; SEMICONDUCTORS ; ORIGIN ; PHONON
语种: 英语
JCR小类分区: 二区
WOS记录号: WOS:000384288500001
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinano.ac.cn/handle/332007/4928
Appears in Collections:大科学装置_期刊论文

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Recommended Citation:
Bao, W,Su, ZC,Zheng, CC,et al. Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy[J]. SCIENTIFIC REPORTS,2016,6.
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