SINANO OpenIR  > 纳米器件及相关材料研究部  > 张宝顺团队
晶圆级半导体器件及其制备方法
Alternative Title晶圆级半导体器件及其制备方法
蔡勇,张亦斌,徐飞
2018-07-04
Country日本
patentType发明
Application Date2016-07-22
Application Number2016-548038
Open (Notice) Number JP6352430B2
Document Type专利
Identifierhttp://ir.sinano.ac.cn/handle/332007/6496
Collection纳米器件及相关材料研究部_张宝顺团队
Recommended Citation
GB/T 7714
蔡勇,张亦斌,徐飞. 晶圆级半导体器件及其制备方法[P]. 2018-07-04.
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ウエハレベル半導体デバイス及びその製造方(814KB)专利 开放获取CC BY-NC-SAApplication Full Text
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