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高强度透明高导电性自支持碳纳米管超薄膜及其制备方法
靳健; 陈新江; 石准
2012-08-08
Date Available2012-09-26
Country中国
Abstract本发明涉及一种高强度透明高导电性自支持碳纳米管超薄膜及其制备方法。该超薄膜主要由碳纳米管交织的网络组成,碳纳米管用量为0.01-0.7mg/cm2,膜厚度在10nm以上,透光率50-97%,电导率30-500Ω/□,拉伸强度可高达2000MPa,并具有较大面积。该超薄膜是由单壁和/或双壁和/或多壁碳纳米管通过过滤、印刷、涂覆等方法成膜再从膜上剥离形成自支持薄膜而成。本发明的自支持碳纳米管超薄膜具有超高的力学性能、优异的电学和光学性能,可在光电技术领域广泛应用,同时,其工艺简便,易于操作,可控性好,安全环保,且可利用市售的碳纳米管作为原料,来源广泛,成本低廉,适于大批量、大面积制备的工业化生产。
Application Date2010-12-24
Patent NumberCN 102110489 B
Language中文
Application Number201010604342.6
Document Type专利
Identifierhttp://ir.sinano.ac.cn/handle/332007/835
Collection纳米仿生研究部_靳健团队
Recommended Citation
GB/T 7714
靳健,陈新江,石准. 高强度透明高导电性自支持碳纳米管超薄膜及其制备方法. CN 102110489 B[P]. 2012-08-08.
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